Influence of parasitics of components and circuit on switching losses of power SiC and GaN transistors in power converter applications
Author:
Affiliation:
1. Gdynia Maritime University,Gdynia,Poland
2. University of Naples Federico II,Naples,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264387.pdf?arnumber=10264387
Reference23 articles.
1. Modeling of Wide Bandgap Power Semiconductor Devices—Part I
2. A Survey of Wide Bandgap Power Semiconductor Devices
3. Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications
4. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
5. Optimized Kilowatt-Range Boost Converter Based on Impulse Rectification With 52 kW/l and 98.6% Efficiency
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1. Investigation of Dead Time Losses in Inverter Switching Leg Operation: GaN FET vs. MOSFET Comparison;Energies;2024-08-05
2. Influence of Parasitic Capacitances and Inductances in a Power Electronic Converter on Junction Temperature of Power GaN HEMTs;2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2024-06-27
3. A Datasheet-Driven Electrothermal Averaged Model of a Diode–MOSFET Switch for Fast Simulations of DC–DC Converters;Electronics;2023-12-29
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