A rapid-sintering Cu-Cu joints with ultrahigh shear strength and super reliability for power electronics package

Author:

Dai Dongfang,Qian Jing,Li Jincheng,Huang Yexiong,Wang Zeping,Yu Jiabing,Wang Xiao,Chen Xianping

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference45 articles.

1. Silicon-carbide (SiC) Semiconductor Power Electronics for Extreme High-Temperature Environments;Hornberger,2004

2. Switching characteristics of GaN HFETs in a half bridge package for high temperature applications, IEEE;Nomura;Trans. Power Electr.,2008

3. Study and handling methods of power SIC MOSFET module failures in power electronic converter systems;Choi;IEEE Trans. Power Electron.,2015

4. Silicon carbide power transistors: a new era in power electronics is initiated;Rabkowski;IEEE Ind. Electron.,2012

5. A survey of wide bandgap power semiconductor devices;Millan;IEEE Trans. Power Electron.,2014

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