An a-IGZO TFT based Op-Amp with 57 dB DC-Gain, 311 KHz Unity-gain Freq., 75 deg. Phase Margin and 2.43 mW Power on Flexible Substrate-Reference-Cited by-同舟云学术

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An a-IGZO TFT based Op-Amp with 57 dB DC-Gain, 311 KHz Unity-gain Freq., 75 deg. Phase Margin and 2.43 mW Power on Flexible Substrate

Published:2021-09-13 Issue: Volume: Page:
ISSN:
Container-title:ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)
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Author:

Dandekar Mohit,Myny Kris,Dehaene Wim

Funder

European Research Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9567713/9567736/09567794.pdf?arnumber=9567794

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub–180-nanometer-thick ultraconformable high-performance carbon nanotube–based dual-gate transistors and differential amplifiers;Science Advances;2024-09-06

2. A Full-Oxide CMOS Operational Amplifier Based on n-Type IGZO and p-Type SnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2024-06

3. A Large-Area LTPS-TFT-Based Bi-directional Biomedical Interface with Process-Invariant In-pixel Biopotential-to-Digital Converters;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

4. An Ultrasonic Driver Array in Metal-Oxide Thin-Film Technology Using a Hybrid TFT-Si DLL Locking Architecture;IEEE Journal of Solid-State Circuits;2024-02

5. Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress;Advanced Functional Materials;2023-10-11

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