An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications-Reference-Cited by-同舟云学术

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An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications

Published:2022-09-19 Issue: Volume: Page:
ISSN:
Container-title:ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)
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Author:

Carissimi M.¹,Auricchio C.¹,Calvetti E.¹,Capecchi L.¹,Torres M.¹,Zanchi S.¹,Gupta P.²,Zurla R.¹,Cabrini A.³,Gallinari D.¹,Disegni F.¹,Borghi M.¹,Palumbo E.¹,Redaelli A.¹,Pasotti M.¹

Affiliation:

1. STMicroelectronics,Agrate Brianza,Italy

2. STMicroelectronics,Greater Noida,India

3. University of Pavia,Pavia,Italy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9911257/9911222/09911379.pdf?arnumber=9911379

Reference10 articles.

1. Enhanced Multiple-Output Programmable Current Pulse Generator

2. High Temperature Challenge for PCM as enabler for a wide applications spectrum

3. A 32KB 18ns random access time embedded PCM with enhanced program throughput for automotive and smart power applications

4. An N40 256K×44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance

5. 13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking;IEEE Open Journal of the Solid-State Circuits Society;2024

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