13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique-Reference-Cited by-同舟云学术

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13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique

Published:2019-02 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Solid- State Circuits Conference - (ISSCC)
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Author:

Wei Liqiong,Alzate Juan G.,Arslan Umut,Brockman Justin,Das Nilanjan,Fischer Kevin,Ghani Tahir,Golonzka Oleg,Hentges Patrick,Jahan Rawshan,Jain Pulkit,Lin Blake,Meterelliyoz Mesut,OrDonnell Jim,Puls Conor,Quintero Pedro,Sahu Tanaya,Sekhar Meenakshi,Vangapaty Ajay,Wiegand Chris,Hamzaoglu Fatih

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8656625/8662285/08662444.pdf?arnumber=8662444

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