A 32KB 18ns random access time embedded PCM with enhanced program throughput for automotive and smart power applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8061155/8094509/08094590.pdf?arnumber=8094590
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications;ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC);2022-09-19
2. Accelerating the development of phase‐change random access memory with in‐fab plasma profiling time‐of‐flight mass spectrometry;Surface and Interface Analysis;2020-06-15
3. Modification of Ge-rich GeSbTe surface during the patterning process of phase-change memories;Microelectronic Engineering;2020-01
4. Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2019-12
5. Drift induced rigid current shift in Ge-Rich GST Phase Change Memories in Low Resistance State;2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2019-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3