A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs-Reference-Cited by-同舟云学术

A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs

Author:

Di Benedetto Luigi¹,Licciardo Gian Domenico¹,Erlbacher Tobias²,Bauer Anton J.²,Liguori Rosalba¹,Rubino Alfredo¹

Affiliation:

1. Department of Industrial Engineering, University of Salerno, Fisciano, Italy

2. Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca through the NEMBO Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

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