Behavior Modeling and Analysis of High-Voltage SiC MOSFET Considering Temperature Effect-Reference-Cited by-同舟云学术

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Behavior Modeling and Analysis of High-Voltage SiC MOSFET Considering Temperature Effect

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:IECON 2023- 49th Annual Conference of the IEEE Industrial Electronics Society
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Author:

Li Weiguo¹,Xu Yunfei²,Li Qingping²,Hao Yi²,Zhao Guoliang²,Liu Haijun²

Affiliation:

1. State Grid Smart Grid Research Institute Co., Ltd,State Key Laboratory of Advanced Power Transmission Technology,Beijing,China

2. State Grid Smart Research Institute Co., Ltd,State Key Laboratory of Advanced Power Transmission Technology,Beijing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10311571/10311610/10311758.pdf?arnumber=10311758

Reference13 articles.

1. Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior

2. A Non-segmented PSpice Model of SiC MOSFET with Temperature-Dependent Parameters [J];li;IEEE Transactions on Power Electronics,2018

3. Improved SiC Power MOSFET Model Considering Nonlinear Junction Capacitances

4. A Recent Review on Silicon Carbide Power Devices Technologies [J];kuang;Proceedings of the CSEE,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC MOSFET Full Junction Temperature Estimation Modeling Method Based on Data Driving;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

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