Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9471017/09366391.pdf?arnumber=9366391
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures;IEEE Transactions on Power Electronics;2024-11
2. Improved Temperature-Scalable DC model for SiC power MOSFET including Quasi-Saturation effect;Solid-State Electronics;2024-10
3. Impact of $V_\mathsf {th}$ Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors;IEEE Transactions on Power Electronics;2024-09
4. Refining Accuracy: A Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
5. An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range;IEEE Transactions on Power Electronics;2024-06
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