Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width-Reference-Cited by-同舟云学术

Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width

Published:2024-06 Issue:2 Volume:24 Page:323-328
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Luo Hou-Cai¹^ORCID,Wu Huan¹^ORCID,Zhang Jing-Ping¹^ORCID,Zheng Bo-Feng²,Lang Lei¹^ORCID,Zhang Guo-Qi³^ORCID,Chen Xian-Ping¹^ORCID

Affiliation:

1. Key Laboratory of Optoelectronic Technology and Systems Education Ministry of China, and the College of Optoelectronic Engineering, Chongqing University, Chongqing, China

2. LAB 2020, Chongqing Pingchuang Institute of Semiconductors Company Ltd, Chongqing, China

3. Delft Institute of Microsystems and Nanoelectronics, Delft University of Technology, Delft, CD, The Netherlands

Funder

General Fund for Pre-Research of Military Program

General Program of National Natural Science Foundation of China

Frontier Innovation Program

Key Laboratory Open Fund

Chongqing Municipal Technology Innovation and Application Development Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7298/10566496/10499866.pdf?arnumber=10499866

Reference16 articles.

1. A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications

2. Review of Silicon Carbide Power Devices and Their Applications

3. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

4. A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs

5. The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs