Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTs
Author:
Affiliation:
1. Robert Bosch Center for Power Electronics, Reutlingen University, Reutlingen, Germany
2. Chair of Energy Conversion, Technical University of Dortmund, Dortmund, Germany
3. Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany
Funder
German Federal Ministry of Education and Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7862872/07803535.pdf?arnumber=7803535
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