Improvements to the Analytical Model to Describe UIS Events-Reference-Cited by-同舟云学术

Improvements to the Analytical Model to Describe UIS Events

Published:2022-07 Issue:7 Volume:69 Page:3848-3853
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Steinmann Philipp¹^ORCID,Ganguly Satyaki¹,Hull Brett¹^ORCID,Lam Khiem¹,Lichtenwalner Daniel J.¹^ORCID,Park Jae-Hyung¹,Potera Rahul¹,Richmond Jim¹^ORCID,Ryu Sei-Hyung¹,Sabri Shadi¹,Van Brackle Charles¹,Van Brunt Edward¹,Williams Elizabeth¹

Affiliation:

1. Wolfspeed Inc., Research Triangle Park, NC, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09777849.pdf?arnumber=9777849

Reference14 articles.

1. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

2. Review and analysis of SiC MOSFETs’ ruggedness and reliability

3. Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

4. Impact of Negative Gate Bias and Inductive Load on the Single-Pulse Avalanche Capability of 1200-V SiC Trench MOSFETs

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1. UIS Ruggedness of Parallel 4H-SiC MOSFETs;Solid State Phenomena;2024-08-26

2. Avalanche Dynamics Model of SiC MOSFET Considering Thermal Runaway Phenomenon;IEEE Transactions on Power Electronics;2023-08

3. Temperature dependence of avalanche breakdown in 4H-SiC devices;Journal of Applied Physics;2023-06-16