Avalanche Dynamics Model of SiC MOSFET Considering Thermal Runaway Phenomenon-Reference-Cited by-同舟云学术

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Avalanche Dynamics Model of SiC MOSFET Considering Thermal Runaway Phenomenon

Published:2023-08 Issue:8 Volume:38 Page:9705-9716
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Wang Ning¹^ORCID,Zhang Jianzhong¹^ORCID,Deng Fujin¹^ORCID

Affiliation:

1. School of Electrical Engineering, Southeast University, Nanjing, China

Funder

National Key R&D Program

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10159460/10121909.pdf?arnumber=10121909

Reference30 articles.

1. Analysis of Current Capability of SiC Power MOSFETs Under Avalanche Conditions

2. Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

3. Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

4. Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs

5. Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Avalanche Capability of SiC MOSFET Under High Current;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

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