Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter
Author:
Affiliation:
1. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA
2. Université Paris-Saclay, CNRS, C2N, Palaiseau, France
3. DPIA, University of Udine, Udine, Italy
Funder
Intel Corporation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09707484.pdf?arnumber=9707484
Reference35 articles.
1. Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
2. Band‐gap narrowing in novel III‐V semiconductors
3. Band parameters for III–V compound semiconductors and their alloys
4. Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading
5. Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors
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