Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. S.O. Koswatta, M.S. Lundstrom, and D.E. Nikonov, Performance comparison between p-i-n tunneling transistors and device-a MOSFETs. IEEE Trans. Electron Dev. 56, 456 (2009).
2. M. Saravanan and E. Parthasarathy, A review of III-V tunnel field effect transistors for future ultra-low power digital/analog applications. Microelectron. J. 114, 105102 (2021).
3. M. Zare, F. Peyravi, and S.E. Hosseini, Impact of hetero-dielectric ferroelectric gate stack on analog/RF performance of tunnel FET. J. Electron. Mater. 49, 5638 (2020).
4. S. Yadav, B. Awadhiya, and A. Mittal, Ohmic Junction based tunnel FET for high frequency and low power applications. Silicon 24, 74 (2022).
5. A.M. Ionescu and H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479, 329 (2011).
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献