Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices-Reference-Cited by-同舟云学术

Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

Published:2023-04 Issue:4 Volume:70 Page:1533-1539
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Roldan Juan B.¹^ORCID,Maldonado David¹^ORCID,Aguilera-Pedregosa C.¹,Alonso Francisco J.²^ORCID,Xiao Yiping³,Shen Yaqing³,Zheng Wenwen³,Yuan Yue⁴,Lanza Mario⁴^ORCID

Affiliation:

1. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Granada, Spain

2. Departamento de Estadística e InvestigaciónOperativa e Instituto deMatemáticas IMAG, Facultad de Ciencias, Universidad de Granada, Granada, Spain

3. Collaborative Innovation Center of Suzhou Nano Science and Technology, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, China

4. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia

Funder

Ministry of Science and Technology of China

National Natural Science Foundation of China

Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain), and European Regional Development Fund

Ministerio de Ciencia Innovación y Universidades/Agencia Estatal de Investigación/Fondo Europeo de Desarrollo Regional

“Maria de Maeztu” Excellence Unit IMAG

MCIN/AEI/10

King Abdullah University of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/09870171.pdf?arnumber=9870171

Reference44 articles.

1. Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect

2. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems

3. Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices

4. Memory devices and applications for in-memory computing

5. Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Attojoule Hexagonal Boron Nitride‐Based Memristor for High‐Performance Neuromorphic Computing;Small;2024-07

2. Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials;Nano-Micro Letters;2024-02-19

3. Stochastic resonance in 2D materials based memristors;npj 2D Materials and Applications;2024-01-30

4. 3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach;Materials Horizons;2024

5. Editorial Special Issue on Dielectrics for 2-D Electronics;IEEE Transactions on Electron Devices;2023-04