Editorial Special Issue on Dielectrics for 2-D Electronics-Reference-Cited by-同舟云学术

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Editorial Special Issue on Dielectrics for 2-D Electronics

Published:2023-04 Issue:4 Volume:70 Page:1451-1453
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lanza Mario¹^ORCID,Pey Kin-Leong²^ORCID,Grasser Tibor³^ORCID

Affiliation:

1. Materials Science and Engineering Program Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia

2. Engineering Product Development, Singapore University of Technology and Design, Singapore, Singapore

3. Institute for Microelectronics TU Wien, Vienna, Austria

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10081248.pdf?arnumber=10081248

Reference15 articles.

1. The development of integrated circuits based on two-dimensional materials

2. Ultra-scaled MOCVD MoS2 MOSFETs with 42 nm contact pitch and 250 ?A/?m drain current;smets;IEDM Tech Dig,2019

3. First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate

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