−10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p<sup>+</sup>-Diamond-First and Silicon Molecular Beam Deposition Approaches-Reference-Cited by-同舟云学术

−10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p⁺-Diamond-First and Silicon Molecular Beam Deposition Approaches

Published:2022-05 Issue:5 Volume:69 Page:2236-2242
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fu Yu¹^ORCID,Chang Yuhao¹^ORCID,Kono Shozo²,Hiraiwa Atsushi¹^ORCID,Kanehisa Kyotaro¹,Zhu Xiaohua¹,Xu Ruimin³,Xu Yuehang³^ORCID,Kawarada Hiroshi¹^ORCID

Affiliation:

1. Faculty of Science and Engineering, Waseda University, Tokyo, Japan

2. Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo, Japan

3. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

Funder

Scholarship from China Scholarship Council

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09740486.pdf?arnumber=9740486

Reference35 articles.

1. 7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

2. High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation

3. Characterization and Control of Native Oxide on Silicon

4. High-Resolution Electron Microscopy and Scanning Tunneling Microscopy of Native Oxides on Silicon

5. Characterization and Analysis of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Different Surface Charge Models with Device Simulation

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