High-Resolution Electron Microscopy and Scanning Tunneling Microscopy of Native Oxides on Silicon-Reference-Cited by-同舟云学术

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High-Resolution Electron Microscopy and Scanning Tunneling Microscopy of Native Oxides on Silicon

Published:1987-08-07 Issue:4815 Volume:237 Page:630-633
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Carim A. H.¹,Dovek M. M.²,Quate C. F.²,Sinclair R.¹,Vorst C.³

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.

2. E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305.

3. Philips Research Laboratories Sunnyvale, Signetics Corporation, 811 East Arques Avenue, Sunnyvale, CA 94088.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference16 articles.

1. ARCHER, R.J., OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 104: 619 (1957).

2. BINNIG, G, SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY, PHYSICAL REVIEW LETTERS 49: 57 (1982).

3. BRAVMAN, J.C., J APPL PHYS 57: 2279 (1985).

4. BRAVMAN, J.C., THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY, JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE 1: 53 (1984).

5. BRYANT, A, IMAGING IN REAL-TIME WITH THE TUNNELING MICROSCOPE, APPLIED PHYSICS LETTERS 48: 832 (1986).

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