Diamond research: highlights from 2023
Author:
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/26941112.2024.2374566
Reference18 articles.
1. Kawarada H, Ota K, Fu Y, et al. Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V−1s−1 and |VTH|>3V Normally-off for Complementary Power Circuits. San Francisco (CA): IEEE International Electron Devices Meeting (IEDM), 2023.
2. Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si-Terminated (C–Si–O) Diamond Capacitors
3. −10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p+-Diamond-First and Silicon Molecular Beam Deposition Approaches
4. Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al2O3 Gate Insulator With Drain Current Density Over 300 mA/mm
5. Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel;Ota K;Carbon,2023
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