GaSb/GaAs Type-II Heterojunction TFET on SELBOX Substrate for Dielectric Modulated Label-Free Biosensing Application-Reference-Cited by-同舟云学术

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GaSb/GaAs Type-II Heterojunction TFET on SELBOX Substrate for Dielectric Modulated Label-Free Biosensing Application

Published:2022-09 Issue:9 Volume:69 Page:5185-5192
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Singh Ashish Kumar¹^ORCID,Tripathy Manas Ranjan²^ORCID,Baral Kamalaksha³^ORCID,Jit Satyabrata¹^ORCID

Affiliation:

1. Department of Electronics Engineering, Indian Institute of Technology, BHU, Varanasi, India

2. Department of Electronics and Communication Engineering, Shiksha ‘O’ Anusandhan (Deemed to be University), Odisha, India

3. Department of Electronics and Communication Engineering, VIT, AP University, Amaravati, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09843935.pdf?arnumber=9843935

Reference48 articles.

1. Spiral-path high-sensitivity silicon photonic wire molecular sensor with temperature-independent response

2. Simulation Study and Comparative Analysis of Some TFET Structures with a Novel Partial-Ground-Plane (PGP) Based TFET on SELBOX Structure

3. TFET on Selective Buried Oxide (SELBOX) Substrate with Improved ION/IOFF Ratio and Reduced Ambipolar Current

4. Staggered heterojunctions-based tunnel-FET for application as a label-free biosensor

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