Simulation Study and Comparative Analysis of Some TFET Structures with a Novel Partial-Ground-Plane (PGP) Based TFET on SELBOX Structure
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00330-2.pdf
Reference37 articles.
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3. Kilchytska V et al (2003) Influence of device engineering on the analog and RF performances of SOI MOSFETs. IEEE Trans Electron Devices 50:577–588. https://doi.org/10.1109/TED.2003.810471
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