Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. A. Raman, K.J. Kumar, D. Kakkar, R. Ranjan, and N. Kumar, Performance investigation of source delta-doped vertical nanowire TFET. J. Electron. Mater. 51, 5655 (2022).
2. J.E. Jeyanthi, T.S.A. Samuel, A.S. Geege, and P. Vimala, A detailed roadmap from single gate to heterojunction TFET for next generation devices. Silicon 14, 3185 (2022).
3. O.K. Singh, V. Dhandapani, and B. Kaur, Partially extended germanium source DG-TFET: design, analysis, and optimization for enhanced digital and analog/RF parameters. Silicon 15, 1475 (2023).
4. A. Upasana, M. Saxena, and M. Gupta, Undoped drain graded doping (UDGD) based TFET design: an innovative concept. Superlattices Microstruct. 163, 107147 (2022).
5. D. Soni, D. Sharma, S. Yadav, M. Aslam, and N. Sharma, Performance improvement of doped TFET by using plasma formation concept. Superlattices Microstruct. 113, 97 (2018).