Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. A. Raman, K.J. Kumar, D. Kakkar, R. Ranjan, and N. Kumar, Performance investigation of source delta-doped vertical nanowire TFET. J. Electron. Mater. 51, 5655 (2022).
2. J.E. Jeyanthi, T.S.A. Samuel, A.S. Geege, and P. Vimala, A detailed roadmap from single gate to heterojunction TFET for next generation devices. Silicon 14, 3185 (2022).
3. O.K. Singh, V. Dhandapani, and B. Kaur, Partially extended germanium source DG-TFET: design, analysis, and optimization for enhanced digital and analog/RF parameters. Silicon 15, 1475 (2023).
4. A. Upasana, M. Saxena, and M. Gupta, Undoped drain graded doping (UDGD) based TFET design: an innovative concept. Superlattices Microstruct. 163, 107147 (2022).
5. D. Soni, D. Sharma, S. Yadav, M. Aslam, and N. Sharma, Performance improvement of doped TFET by using plasma formation concept. Superlattices Microstruct. 113, 97 (2018).
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献