TFET on Selective Buried Oxide (SELBOX) Substrate with Improved ION/IOFF Ratio and Reduced Ambipolar Current
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-018-9894-0.pdf
Reference31 articles.
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4. Adan AO, Higashi K (2001) OFF-state leakage current mechanisms in Bulk Si and SOI MOSFETs and their impact on CMOS ULSIs standby current. IEEE Trans Electron Devices 48:2050–2057
5. Vishnoi R, Kumar MJ (2014) Compact analytical model of dual material gate tunneling field-effect transistor using interband tunneling and channel transport. IEEE Trans Electron Devices 61:1936–1942
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