Collector Engineered Bidirectional Insulated Gate Bipolar Transistor With Low Loss
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, National Institute of Technology at Raipur, Raipur, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9722602/09690616.pdf?arnumber=9690616
Reference26 articles.
1. An Ultralow Loss Superjunction Reverse Blocking Insulated-Gate Bipolar Transistor With Shorted-Collector Trench
2. A High Bidirectional Blocking Capability Insulated-Gate Bipolar Transistor With Ultralow Loss
3. Low‐loss reverse blocking IGBT with PNM structure and trench collectors
4. Optimisation of SuperJunction Bipolar Transistor for ultra-fast switching applications
5. The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages
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1. Low Loss Gate Engineered Superjunction Insulated Gate Bipolar Transistor for High Speed Application;2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID);2024-01-06
2. Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction;Acta Physica Sinica;2024
3. T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver;Energies;2023-06-11
4. 1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application;ECS Journal of Solid State Science and Technology;2022-11-01
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