Author:
Duan Baoxing ,Liu Yulin ,Tang Chunping ,Yang Yintang ,
Abstract
Insulated Gate Bipolar Transistor (IGBT) is the core of modern power semiconductor devices, and has been widely applied due to its excellent electrical characteristics. A novel majority carrier accumulation mode IGBT with Schottky junction contact gate semiconductor layer (AC-SCG IGBT) is proposed and investigated by TCAD simulation in this article. When AC-SCG IGBT is in the on-state, a forward bias is applied to the gate. Due to the very low forward voltage drop (<i>V<sub>F</sub></i>) of the Schottky barrier diode, the potential of the gate semiconductor layer is almost equal to the gate potential, which can accumulate a large number of majority carrier electrons in the drift region. In addition to the existing electrons, these accumulated electrons increase the conductivity of the drift region, thus significantly reducing <i>V<sub>F</sub></i>. Therefore, the doping concentration of the drift region is not limited by <i>V<sub>F</sub></i>. The lightly doped drift region can make AC-SCG IGBT have a higher breakdown voltage (<i>BV</i>). Moreover, it also reduces the barrier capacitance during the turn-off process, thus the overall Miller capacitance is small, which can quickly turn off and reduce the turn-off time (<i>T<sub>off</sub></i>) and turn-off loss (<i>E<sub>off</sub></i>). The simulation results indicate that at the <i>BV</i> of 600V, the <i>V<sub>F</sub></i> of 0.84V for the proposed AC-SCG IGBT is reduced by 46.2% compared with the conventional IGBT (<i>V<sub>F</sub></i> of 1.56V). The <i>E<sub>off</sub></i> of the AC-SCG IGBT (0.77mJ/cm<sup>2</sup>) is reduced by 52.5% compared with the conventional IGBT (1.62mJ/cm<sup>2</sup>) and the <i>T<sub>off</sub></i> (155.8ns-222.7ns) is reduced by 30%. The contradiction between <i>V<sub>F</sub></i> and <i>E<sub>off</sub></i> is broken. In addition, the proposed AC-SCG IGBT has better anti-latch-up ability, and coupled with its higher <i>BV</i>, it has a larger forward biased safe operating area (FBSOA). The proposed novel structure meets the development requirements of future IGBT device performance, and has great guiding significance for the power semiconductor device field.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference20 articles.
1. Baliga B J 1979 Electron. Lett. 15 645
2. Baliga B J 1988 IEEE Proc. 76 409
3. Wang C L 2015 New Power Semiconductor Devices and Their Manufacturing Technologies (Beijing:China Machine Press) pp5—7 (in Chinese) [王彩琳 2015 电力半导体新器件及其制造技术 (北京:机械工业出版社) 第5—7页]
4. Baliga B J (translated by Han Z S, Lu J, Song L M) 2013 Fundamentals of Power Semiconductor Devices (Beijing: Publishing House of Electronics Industry) pp399—401 (in Chinses) [巴利加BJ著 (韩郑生,陆江,宋李梅译) 2013 功率半导体器件基础 (北京:电子工业出版社) 第399—401页]
5. Chang H R, Baliga B J, Kretchmer J W, Piacente P A 1987 International Electron Devices Meeting (IEDM) Washington, USA, December6—9, 1987 p674