Low Loss Gate Engineered Superjunction Insulated Gate Bipolar Transistor for High Speed Application-Reference-Cited by-同舟云学术

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Low Loss Gate Engineered Superjunction Insulated Gate Bipolar Transistor for High Speed Application

Published:2024-01-06 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID)
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Author:

Behera Shriharsh Prasad¹,Vaidya Mahesh²,Naugarhiya Alok¹

Affiliation:

1. National Institute of Technology,Department of Electronics and Communication Engineering,Raipur

2. Indian Institute of Science,Department of Electronic Systems Engineering,Bengaluru

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10483275/10483296/10483493.pdf?arnumber=10483493

Reference22 articles.

1. The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages

2. The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

3. Lateral Variation-Doped Insulated Gate Bipolar Transistor for Low On-State Voltage With Low Loss

4. Low Switching Loss and EMI Noise IGBT With Self-Adaptive Hole-Extracting Path

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