Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Deboy G, Marz M, Stengel JP, Strack H, Tihanyi J, Weber H. A new generation of high voltage MOSFETs breaks the limit line of silicon. In: Proc. IEDM, 1998. p. 683–5
2. Fujihira T, Miyasaka Y. Simulated superior performances of semiconductor super junction devices. In: Proc. ISPSD’98 1998. p. 423–6
3. Lorenz L, Marz M, Deboy G. COOLMOS––an important milestone towards a new power MOSFET generation. In: Proc. Power Conversion, 1998. p. 151–60
4. Schlogl AE, Deboy G, Lorenzen HW, Linnert U, Schulze HJ, Stengl JP. Properties of COOLMOS between 420 and 80 K––the ideal device for cryogenic applications. In: Proc. ISPSD’99, 1999. p. 91–4
5. Lorenz L, Deboy G, Knapp A, Marz M. COOLMOS––a new milestone in high voltage power MOS. In: Proc. ISPSD’99, 1999. p. 3–10
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