Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress-Reference-Cited by-同舟云学术

Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress

Published:2024-08 Issue:8 Volume:71 Page:4853-4859
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Luping¹^ORCID,Li Zehong¹^ORCID,Wu Yuzhou²^ORCID,Chen Peng³^ORCID,Rao Qiansheng¹,Yang Yuanzhen¹^ORCID,Xiao Fuyuan¹,Qin Haifeng⁴,Wan Li⁴,Li Wei⁴,Ren Min¹,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. Shanghai Super Semiconductor Technology Company Ltd., Shanghai, China

3. School of Aeronautics and Astronautics, UESTC, Chengdu, China

4. China Resources Microelectronics (Chongqing) Ltd., Chongqing, China

Funder

Natural Science Foundation of Chongqing, China

Natural Science Foundation of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10557501.pdf?arnumber=10557501

Reference21 articles.

1. Energy and current crowding limits in avalanche operation of IGBTs

2. Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive Switching

3. Investigations of inhomogeneous operation of IGB under unclamped inductive switching condition;Mizuno

4. Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography

5. Complete Avalanche Process and Failure Mechanism of Trench-Gate FS-IGBT Under Unclamped Inductive Switching by Using Infrared Visualization Method