Time Dynamics of the Down-Coupling Phenomenon in 3-D NAND Strings
Author:
Affiliation:
1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9967813/09940226.pdf?arnumber=9940226
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1. Quantum correction to the equation of state of an electron gas in a semiconductor
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3. Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part I: Polysilicon-Induced Variability
4. TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation
5. An Analytical Model for the Transfer Characteristics of a Polycrystalline Silicon Thin-Film Transistor With a Double Exponential Grain-Boundary Trap-State Energy Dispersion
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