An Analytical Model for the Transfer Characteristics of a Polycrystalline Silicon Thin-Film Transistor With a Double Exponential Grain-Boundary Trap-State Energy Dispersion-Reference-Cited by-同舟云学术

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An Analytical Model for the Transfer Characteristics of a Polycrystalline Silicon Thin-Film Transistor With a Double Exponential Grain-Boundary Trap-State Energy Dispersion

Published:2009-10 Issue:10 Volume:30 Page:1072-1074
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chow T.,Man Wong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5263237/05235114.pdf?arnumber=5235114

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3. Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors;IEEE Transactions on Electron Devices;2017-10

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5. Extraction Technique of Trap Densities in Thin Films and at Insulator Interfaces of Thin-Film Transistors;Japanese Journal of Applied Physics;2011-03-22

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