Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory-Reference-Cited by-同舟云学术

Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory

Published:2023-03-07 Issue:6 Volume:13 Page:3388
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Ryu Gyunseok¹,Kim Hyunju¹,Lee Jihwan¹,Kang Myounggon¹^ORCID

Affiliation:

1. Department of Electronics Engineering, Korea National University of Transportation, Room No. 326, Smart ICT Building, 50 Daehak-ro, Chungju-si 27469, Republic of Korea

Abstract

This study analyzed the recovery of channel potential according to the program states of adjacent cells. When the verify operation ended, and all voltages dropped to 0 V and the decreased potential of the floating channel caused by the down-coupling phenomenon was recovered continuously over time, regardless of the program states of adjacent WLs. The extent of channel potential recovery showed a similar tendency to that of the variation in the electron concentration of the floating channel. The electron–hole pair recombination decreased the electron concentration, resulting in channel potential recovery. When the adjacent WLs were programmed in a low state, additional electron–hole pair recombination and hole diffusion occurred in the floating channel. Therefore, the channel potential recovered quickly when the adjacent WLs programmed in a low state compared to when they programmed in a high state.

Funder

Institute of Information & communications Technology Planning & Evaluation (IITP) grant funded by the Korea government

Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education

National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

https://www.mdpi.com/2076-3417/13/6/3388/pdf

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