The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology

Author:

Qi Guodong1ORCID,Gan Weizhuo2ORCID,Xu Lijun2,Liu Jiangtao3,Yang Qihang1ORCID,Zhu Xiaona4ORCID,Zhou Jiuren5ORCID,Ma Xinyu1,Hu Guangxi1ORCID,Chen Tao1ORCID,Yu Shaofeng1ORCID,Wu Zhenhua2ORCID,Yin Huaxiang2ORCID,Lu Ye6ORCID

Affiliation:

1. State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai, China

2. Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

3. School of Mechatronics Engineering, Guizhou Minzu University, Guiyang, China

4. School of Microelectronics, Fudan University, Shanghai, China

5. Department of Electrical and Computer Engineering, National University of Singapore, Singapore

6. State Key Laboratory of ASIC and System, Zhangjiang Fudan International Innovation Center, and the School of Information Science and Technology, Fudan University, Shanghai, China

Funder

National Key Research and Development Program

Innovation Program of Shanghai Municipal Education Commission

Shanghai Pujiang Program

Young Scientist Project of MOE Innovation Platform

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Physics-Integrated Machine Learning for Efficient Design and Optimization of a Nanoscale Carbon Nanotube Field-Effect Transistor;ECS Journal of Solid State Science and Technology;2023-09-01

2. Steep Sub-threshold Slope Si and InGaAs Dopingless TFET: TCAD and ADS Simulation Based Investigation for Digital/Analog Applications;2022 International Conference on Smart Generation Computing, Communication and Networking (SMART GENCON);2022-12-23

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