Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors-Reference-Cited by-同舟云学术

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Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors

Published:2024-04 Issue:4 Volume:71 Page:2781-2788
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhou Hang¹^ORCID,Dong Xiping¹^ORCID,Prentki Raphaël J.²^ORCID,Cao Ronggen³,Wang Jian⁴,Guo Hong⁵^ORCID,Liu Fei¹^ORCID

Affiliation:

1. School of Integrated Circuit, Peking University, Beijing, China

2. Nanoacademic Technologies Inc., Montreal, Canada

3. Department of Materials of Science, Fudan University, Shanghai, China

4. College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China

5. Department of Physics, McGill University, Montreal, Canada

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Natural Sciences and Engineering Research Council of Canada

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10459149.pdf?arnumber=10459149

Reference41 articles.

1. In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

2. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

3. Tunnel field-effect transistors as energy-efficient electronic switches

4. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

5. Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

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