3-D Physical Electro-Thermal Modeling of Nanoscale Y<sub>2</sub>O<sub>3</sub> Memristors for Synaptic Application-Reference-Cited by-同舟云学术

3-D Physical Electro-Thermal Modeling of Nanoscale Y₂O₃ Memristors for Synaptic Application

Published:2022-06 Issue:6 Volume:69 Page:3124-3129
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar Sanjay¹^ORCID,Gautam Mohit Kumar¹,Gill Gurpreet Singh²^ORCID,Mukherjee Shaibal¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Hybrid Nanodevice Research Group (HNRG), Indian Institute of Technology Indore, Indore, Madhya Pradesh, India

2. Department of Electrical, Electronics and Computer Engineering, School of Engineering, The University of Western Australia, Perth, WA, Australia

Funder

Council of Scientific & Industrial Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09761894.pdf?arnumber=9761894

Reference33 articles.

1. Effect of ZnMnO2O4 thickness on its resistive switching characteristics;zhang;Indian J Eng Mater Sci,2014

2. Synaptic and Fast Switching Memristance in Porous Silicon-Based Structures

3. Neuro-inspired Computing Using Resistive Synaptic Devices

4. AgInSbTe memristor with gradual resistance tuning

5. A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unlocking the potential of effect of gamma irradiation on α-Fe2O3 nanoparticles for high-performance resistive switching applications;Materials Science in Semiconductor Processing;2024-06

2. Optimization of the Forming Process of HfO_x-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer;ACS Applied Electronic Materials;2024-05-14

3. 2D MoS2 monolayers integration with metal oxide-based artificial synapses;Frontiers in Nanotechnology;2024-04-29

4. Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt;Materials;2024-04-17

5. Nanoscale Ni/Mo/MoO₃/Ni memristor for synaptic applications;Electronics Letters;2024-02-28