A Simple Edge Termination Design for Vertical GaN P-N Diodes-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A Simple Edge Termination Design for Vertical GaN P-N Diodes

Published:2022-09 Issue:9 Volume:69 Page:5096-5103
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pandey Prakash¹,Nelson Tolen M.¹,Collings William M.¹,Hontz Michael R.²^ORCID,Georgiev Daniel G.¹,Koehler Andrew D.³^ORCID,Anderson Travis J.³^ORCID,Gallagher James C.³^ORCID,Foster Geoffrey M.³^ORCID,Jacobs Alan³,Ebrish Mona A.³^ORCID,Gunning Brendan P.⁴^ORCID,Kaplar Robert J.⁴^ORCID,Hobart Karl D.³^ORCID,Khanna Raghav¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, The University of Toledo, Toledo, OH, USA

2. Naval Surface Warfare Center Philadelphia Division, Philadelphia, PA, USA

3. U.S. Naval Research Laboratory, Washington, DC, USA

4. Sandia National Laboratories, Albuquerque, NM, USA

Funder

U.S. Office of Naval Research at the University of Toledo

U.S. Naval Research Laboratory through the U.S. Office of Naval Research

Sandia National Laboratories through the ARPA-E’s OPEN+ Kilovolt Devices Cohort

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/9864631/9842310-aam.pdf

Reference40 articles.

1. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

2. Self-compensation due to point defects in Mg-doped GaN

3. High-field properties of carrier transport in bulk wurtzite GaN: A Monte Carlo perspective

4. Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 0.58 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 15.6 kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation;IEEE Electron Device Letters;2024-06

2. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance;IEEE Transactions on Electron Devices;2024-06

3. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability;IEEE Electron Device Letters;2024-05

4. Detecting defects that reduce breakdown voltage using machine learning and optical profilometry;Scientific Reports;2024-03-28

5. Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3