12.5 kV SiC Gate Turn Off Thyristor With Trench-Modulated JTE Structure
Author:
Affiliation:
1. BNRjst, School of Integrated Circuits, Tsinghua University, Beijing, China
Funder
Beijing Science and Technology Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9722602/09709496.pdf?arnumber=9709496
Reference29 articles.
1. 7.5 kV 4H-SiC GTO’s for power conversion;fursin;Proc 28th Annu IEEE Appl Power Electron Conf Expo (APEC),2013
2. A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension
3. Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics
4. 5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension
5. 15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors
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1. Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices;Microelectronics Journal;2024-10
2. A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices;IEEE Electron Device Letters;2024-07
3. Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor;IET Power Electronics;2024-05
4. Implantation-free SiC thyristor with single-mask 3D termination near 10 kV;Solid-State Electronics;2023-03
5. Electric-Magnetic-Thermal Co-simulation Method for SiC Gate Turn-off Thyristor Module;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
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