A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices-Reference-Cited by-同舟云学术

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A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices

Published:2024-07 Issue:7 Volume:45 Page:1261-1264
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Han Chao¹,Liu Yancong¹^ORCID,Liu Keyu¹^ORCID,Yuan Hao¹,Du Fengyu¹^ORCID,Zhou Yu¹^ORCID,Wang Shengbo¹^ORCID,Wang Zixi¹,Tang Xiaoyan¹^ORCID,Song Qingwen¹^ORCID,Zhang Yuming¹^ORCID

Affiliation:

1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, China

Funder

National Key Research and Development Program of China

Natural Science Basic Research Program of Shaanxi

Wuhu Science and Technology Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10542161.pdf?arnumber=10542161

Reference26 articles.

1. Silicon, GaN and SiC: There's room for all: An application space overview of device considerations

2. Fundamentals of Silicon Carbide Technology

3. Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results

4. 27 kV, 20 A 4H-SiC n-IGBTs

5. 10-kV 4H-SiC Gate Turn-OFF Thyristors With Space-Modulated Buffer Trench Three-Step JTE

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