Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results-Reference-Cited by-同舟云学术

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Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results

Published:2019-05 Issue: Volume: Page:
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Container-title:2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Han Kijeong,Agarwal Aditi,Baliga B. Jayant

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8746072/8757559/08757565.pdf?arnumber=8757565

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison and analysis on static and dynamic performance of 1.2-kV SiC planar MOSFETs with different cell topologies;Materials Science in Semiconductor Processing;2024-12

2. A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices;IEEE Electron Device Letters;2024-07

3. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18

4. Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off;IEEE Journal of the Electron Devices Society;2023

5. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023

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