Reliable High-Voltage Drain-Extended FinFET With Thermoelectric Improvement-Reference-Cited by-同舟云学术

Reliable High-Voltage Drain-Extended FinFET With Thermoelectric Improvement

Published:2022-11 Issue:11 Volume:69 Page:5985-5990
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Ki Yeong¹^ORCID,Song Young Suh²^ORCID,Kim Garam³^ORCID,Kim Sangwan⁴^ORCID,Kim Jang Hyun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Pukyong National University, Busan, South Korea

2. Inter-University Semiconductor Research Center (ISRC), Department of Electrical and Computer Engineering (ECE), Seoul National University (SNU), Seoul, South Korea

3. Department of Electronic Engineering, Myongji University, Yongin, South Korea

4. Department of Electronic Engineering, Sogang University, Seoul, South Korea

Funder

National Research Foundation of Korea

Korea Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09915439.pdf?arnumber=9915439

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