Thin Film Analysis After Oxidation
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-6649-3_12
Reference14 articles.
1. Anusha A, Parameswaran C, Revathi P, Velmurugan V. Numerical simulation of dry and wet oxidation of silicon by TCAD sprocess. In: International conference on advanced nanomaterials & emerging engineering technologies. Chennai; 2013. p. 513–6. https://doi.org/10.1109/ICANMEET.2013.6609351.
2. Kushwah B, Srikanth K, DasGupta N, DasGupta A. Ultrathin native oxide by barrier layer oxidation as gate dielectric for AlInN/GaN MIS-HEMTs. In: 2020 5th IEEE international conference on emerging electronics (ICEE). New Delhi; 2020. p. 1–4. https://doi.org/10.1109/ICEE50728.2020.9776963.
3. Song YS, Kim JH, Kim G, Kim H-M, Kim S, Park B-G. Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs. IEEE J Electron Devices Soc. 2021;9:36–41. https://doi.org/10.1109/JEDS.2020.3038391.
4. Woo Young Choi, Byung-Gook Park, and Jong Duk Lee, Fundamentals of Silicon IC Processes (4th ed.), Munundang, Aug. 2011. (ISBN 9788973937820).
5. Song YS, Tayal S, Rahi SB, Kim JH, Upadhyay AK, Park B-G. Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET. In: 2022 5th international conference on circuits, systems and simulation (ICCSS). Nanjing; 2022. p. 135–40. https://doi.org/10.1109/ICCSS55260.2022.9802341.
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