Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters
Author:
Affiliation:
1. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, South Korea
Funder
Chungbuk National University Korea National University Development Project in 2020
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09716754.pdf?arnumber=9716754
Reference44 articles.
1. Oxygen Radical Control via Atmospheric Pressure Plasma Treatment for Highly Stable IGZO Thin-Film Transistors
2. Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors
3. Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors
4. High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment
5. Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors
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1. Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures;Applied Surface Science;2024-10
2. Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs;IEEE Electron Device Letters;2024-09
3. Enhancement of electrical characteristics of SnGaO thin-film transistors via argon and oxygen plasma treatment;Vacuum;2024-07
4. Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors;Applied Surface Science;2024-01
5. Enhancement of Electrical Stability in Solution Processed In2O3 TFT by an Oxygen Plasma-Assisted Treatment;IEEE Transactions on Electron Devices;2023-11
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