High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment-Reference-Cited by-同舟云学术

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High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment

Published:2018 Issue:10 Volume:6 Page:2522-2532
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yao Rihui¹²³⁴⁵^ORCID,Zheng Zeke¹²³⁴⁵^ORCID,Fang Zhiqiang¹²³⁴⁵,Zhang Hongke¹²³⁴⁵,Zhang Xiaochen¹²³⁴⁵,Ning Honglong¹²³⁴⁵,Wang Lei¹²³⁴⁵,Peng Junbiao¹²³⁴⁵,Xie Weiguang⁶⁷⁸⁹¹⁰,Lu Xubing¹¹¹²¹³⁵^ORCID

Affiliation:

1. Institute of Polymer Optoelectronic Materials and Devices

2. State Key Laboratory of Luminescent Materials and Devices

3. South China University of Technology

4. Guangzhou 510640

5. China

6. Siyuan Laboratory

7. Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials

8. Department of Physics and Department of Electronic Engineering

9. Jinan University

10. Guangzhou 510632

11. Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials

12. South China Normal University

13. Guangzhou 510006

Abstract

We propose a facile approach to fabricate high-performance flexible a-IGZO TFTs by adopting the waveform modulation of pulse DC magnetron sputtering.

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC04970F

Reference50 articles.

1. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material

2. Large-Area, Transfer-Free, Oxide-Assisted Synthesis of Hexagonal Boron Nitride Films and Their Heterostructures with MoS2 and WS2

3. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

4. Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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3. Investigate the relationship between densification and grain size of IGZO target by phase‐field simulation;Journal of the American Ceramic Society;2024-02-07

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