Mid-Wavelength InAs/InAsSb Superlattice Photodetector With Background Limited Performance Temperature Higher Than 160 K
Author:
Affiliation:
1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Funder
China’s NSF Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9839401/09815017.pdf?arnumber=9815017
Reference24 articles.
1. Intensity- and temperature-dependent carrier recombination inInAs/InAs1?xSbx type-II superlattices;olson;Phys Rev A Gen Phys,2015
2. Incorporation of Sb and As in MBE grown GaAsxSb1−x layers
3. Quantitative analysis of strain distribution in InAs/InAs1−xSbx superlattices
4. Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy
5. Growth of InAs–InAsSb SLS through the use of digital alloys
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1. Hot-Carrier Effect and Nanometer Metal Enabling Si-Based Mid-Infrared Detection Beyond 5μm of Wavelength;IEEE Photonics Journal;2024-06
2. Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure;Heliyon;2024-06
3. High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors;IEEE Journal of Quantum Electronics;2024-04
4. Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber;Chinese Optics Letters;2024
5. Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier;Optoelectronics Letters;2023-10
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