Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier-Reference-Cited by-同舟云学术

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Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier

Published:2023-10 Issue:10 Volume:19 Page:577-582
ISSN:1673-1905
Container-title:Optoelectronics Letters
language:en
Short-container-title:Optoelectron. Lett.

Author:

Liu Zhaojun,Zhu Lianqing,Lu Lidan,Dong Mingli,Zhang Dongliang,Zheng Xiantong

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11801-023-3032-y.pdf

Reference32 articles.

1. ROGALSKI A, MARTYNIUK P. Mid-wavelength infrared nBn for HOT detectors[J]. Journal of electronic materials, 2014, 43(8): 2963–2969.

2. LIU Z, ZHAO Z F, GUO H M, et al. Band structure and optical absorption in InAs/GaSb quantum well[J]. Acta physica sinica, 2012, 61(21): 217303.

3. MANYK T, HACKIEWICZ K, RUTKOWSKI J, et al. Theoretical simulation of T2SLs InAs/GaSb cascade photodetector for HOT condition[J]. Journal of semiconductors, 2018, 39(9): 38–41.

4. LIU Z J, ZHU L Q, ZHENG X T, et al. Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy[J]. Chinese physics B, 2022, 31(12): 128503.

5. MANASREH M O. Antimonide-related strained-layer heterostructures[J]. Lasers optics & photonics, 1997.

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