Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory-Reference-Cited by-同舟云学术

Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory

Published:2022-09 Issue:9 Volume:69 Page:5262-5269
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sun Chen¹,Han Kaizhen¹^ORCID,Samanta Subhranu¹^ORCID,Kong Qiwen¹,Zhang Jishen¹,Xu Haiwen¹^ORCID,Wang Xinke¹^ORCID,Kumar Annie¹,Wang Chengkuan¹,Zheng Zijie¹^ORCID,Yin Xunzhao²^ORCID,Ni Kai³^ORCID,Gong Xiao¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Lower Kent Ridge Rd, Singapore

2. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

3. Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA

Funder

Singapore Ministry of Education

ARTIC Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09829540.pdf?arnumber=9829540

Reference40 articles.

1. An Ultra-Dense 2FeFET TCAM Design Based on a Multi-Domain FeFET Model

2. Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

3. High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FET

4. First demonstration of BEOL-compatible ferroelectric TCAM featuring a-IGZO Fe-TFTs with large memory window of 2.9 V, scaled channel length of 40 nm, and high endurance of 108 cycles;sun;Proc Symp VLSI Technol,2021

5. Effects of Area Ratio on the Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Field-Effect-Transistors (MFMIS FETs)

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