Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency
Author:
Affiliation:
1. Elmore Family School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10025571/10003107.pdf?arnumber=10003107
Reference34 articles.
1. High-Frequency ZnO Thin-Film Transistors on Si Substrates
2. Ordered nanocrystalline ZnO films for high speed and transparent thin film transistors
3. Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation
4. Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz
5. High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions
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1. Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing;Advanced Functional Materials;2024-06-16
2. Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics;Applied Physics Letters;2024-03-11
3. First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 mA/μm and gm of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C;2023 International Electron Devices Meeting (IEDM);2023-12-09
4. Review—Extremely Thin Amorphous Indium Oxide Transistors;Advanced Materials;2023-12-08
5. Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility;2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2023-06-11
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