Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility
Author:
Affiliation:
1. Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,USA,47907
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10185199/10185158/10185331.pdf?arnumber=10185331
Reference21 articles.
1. Frequency Response and Devices Performance of the Indium Zinc Oxide Thin Film Transistors
2. Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
3. Focused ion beam milling for the fabrication of 160 nm channel length IGZO TFTs on flexible polymer substrates
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1. High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits;Communications Materials;2024-09-11
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