First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, I<sub>d</sub> of 2.32 mA/μm and g<sub>m</sub> of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C-Reference-Cited by-同舟云学术

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First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, I_d of 2.32 mA/μm and g_m of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C

Published:2023-12-09 Issue: Volume:44 Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Hu Qianlan¹,Gu Chengru²,Liu Shiyuan¹,Zeng Min²,Zhu Shenwu²,Kang Jiyang²,Liu Ranhui²,Zhao Wenjie²,Tong Anyu¹,Li Qijun²,Fu Tianyue¹,Huang Ru¹,Wu Yanqing¹

Affiliation:

1. Peking University,School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits,Beijing,China,100871

2. Huazhong University of Science and Technology,Wuhan National High Magnetic Field Center and School of Integrated Circuits,Wuhan,China,430074

Funder

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413673.pdf?arnumber=10413673

Reference22 articles.

1. High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

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