High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric-Reference-Cited by-同舟云学术

High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

Published:2023-05 Issue:5 Volume:44 Page:837-840
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gu Chengru¹,Hu Qianlan²^ORCID,Zhu Shenwu¹^ORCID,Li Qijun¹,Zeng Min¹,Liu Honggang¹,Kang Jiyang¹,Liu Shiyuan²,Wu Yanqing¹^ORCID

Affiliation:

1. School of Optical and Electronic Information and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, China

2. Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, China

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10109212/10087211.pdf?arnumber=10087211

Reference19 articles.

1. Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors

2. First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation

3. High-speed black phosphorus field-effect transistors approaching ballistic limit

4. Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

5. Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In₂O₃ FETs

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1. Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In₂O₃ Thin-Film Transistors;IEEE Transactions on Electron Devices;2024-05

2. Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In₂O₃ TFTs Reaching the Quantum Limit;2023 International Electron Devices Meeting (IEDM);2023-12-09

3. First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, I_d of 2.32 mA/μm and g_m of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C;2023 International Electron Devices Meeting (IEDM);2023-12-09

4. Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics;IEEE Electron Device Letters;2023-10